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| DGS 19-025AS DGS 20-025A(S) DGSK 40-025A(S) Gallium Arsenide Schottky Rectifier IDC = 18 A VRRM = 250 V CJunction = 26 pF Type DGS 19-025AS Marking on product 19A250AS Single A Circuit C Package A = Anode, C = Cathode , TAB = Cathode TO-252 AA A A C (TAB) DGS 20-025A DGS 20-025AS DGS 20-025A DGS 20-025AS A C Single TO-220 AC TO-263 AB TO-220 AB C A A A C (TAB) C (TAB) DGSK 40-025A DGSK 40-025AS DGSK 40-025A DGSK 40-025AS Common cathode A C A A C A C (TAB) TO-263 AB A A C (TAB) Symbol VRRM/RSM IFAV IFAV IFSM TVJ Tstg Ptot Md Conditions Maximum Ratings 250 V A A A C C W Nm Features TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine 18 13 30 -55...+175 -55...+150 TC = 25C mounting torque (TO-220) 48 0.4...0.6 Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications MHz switched mode power supplies (SMPs) Symbol IR VF CJ RthJC RthCH Weight Pulse test: Conditions VR = VRRM; VR = VRRM; IF = 7.5 A; IF = 7.5 A; TVJ = 25C TVJ = 125C TVJ = 125C TVJ = 25C Characteristic Values typ. max. 2.0 2.0 1.3 1.2 26 3.1 1.5 mA mA V V pF K/W K/W g g Small size SMPs High frequency converters Resonant converters VR = 100 V; TVJ = 125C TO-220/263 TO-252 TO-220/263 Pulse Width = 5 ms, Duty Cycle < 2.0 % 0.5 0.3 2 Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 1-3 435 DGS 19-025AS DGS 20-025A(S) DGSK 40-025A(S) 30 10 A IF 1 CJ 300 pF 100 0,1 TVJ = 125C 25C TVJ = 125C 0,01 0,0 0,5 1,0 1,5 VF 2,0 V 2,5 10 0,1 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 K/W 1 ZthJC 0,1 Single Pulse TO-252 TO-220 0,01 DGS 20-022/025A 0,00001 0,0001 0,001 0,01 0,1 1 t s 10 Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak 435 IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 2-3 DGS 19-025AS DGS 20-025A(S) DGSK 40-025A(S) Outlines TO-220 Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110 Outlines TO-252 Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 1 Anode 2 NC 3 Anode 4 Cathode Outline TO-263 Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 3-3 435 |
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